| PART |
Description |
Maker |
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit）Asynchronous SRAM(8M位（256K x 32位）异步静态RAM) 8MB的（256 × 32位）异步SRAM00万位56K × 32位）异步静态RAM）的
256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
| M68AW031A M68AW031AM70NS6U |
256 KBIT (32K X8) 3.0V ASYNCHRONOUS SRAM
256 Kbit (32K x8) 3.0V Asynchronous SRAM
CAC 6C 6#16S PIN PLUG
|
ST Microelectronics
意法半导
|
| GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
| GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| HM62W16255HCTTI-12 HM62W16255HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| HM62W16255HCLTT-12 HM62W16255HCTT-12 HM62W16255HCJ |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| R1RP0416DGE-2PI R1RP0416DSB-2PI |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| GS73024AB-12 GS73024AB-10 |
Asynchronous SRAM 128K X 24 STANDARD SRAM, 12 ns, PBGA119
Asynchronous SRAM 128K X 24 STANDARD SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
